High-temperature, low threshold current, and uniform operation 1/spl times/12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in 1.5 /spl mu/m

In this paper, we describe the fabrication of a monolithically integrated 1/spl times/12 array of 1.5-/spl mu/m AlGaInAs/InP strain-compensated multiple-quantum-well (MQW) lasers, which has high reliability and highly uniform characteristics in low threshold current, slope efficiency, and lasing wavelength. Besides, each diode on the array exhibits a high characteristic temperature of 88 K and a low slope-efficiency drop of less than 1 dB between 20-80/spl deg/C and a lasing wavelength of 1510 nm at 20/spl deg/C and 20 mA. Also, the diode on the array has a maximum resonance frequency of above 8 GHz or 3-dB modulation bandwidth of 12 GHz.