A High Efficiency, Ka-Band Pulsed Gallium Nitride Power Amplifier for Radar Applications

The design and performance of a three stage Ka-band power amplifier MMIC utilizing a 0.2 um GaN on SiC HEMT process technology is presented. Measured both pulsed and CW, the design demonstrates over 5 W of saturated power with an associated power added efficiency (PAE) of 41%. The die size is 2.62x1.62 mm.