A High Efficiency High Power Density Harmonic-Tuned Ka Band Stacked-FET GaAs Power Amplifier

A stacked-FET power amplifier (PA) with harmonic- tuned output matching network is demonstrated using a 0.15-μm Gallium Arsenide (GaAs) technology. The fabricated PA exhibits 28.5 dBm output power, 12 dB gain and 38.4% power added efficiency (PAE). To the best of our knowledge, this is for the first time stacked-FET technique is used in combining with harmonic-tuned output network to achieve high PAE and high power density simultaneously in a GaAs PA.