Measurement of voids in a-Si:H film and their influence on silicon heterojunction solar cell

Diameter (D) and number density (A
_voids
) of large voids in a-Si:H films are determined using an easy optical method. Electric measurements of heterostructures: a-Si:H/c-Si/a-Si:H find both D and A affect passivation of c-Si surfaces. Additionally, I-V measurements of silicon heterojunction (SHJ) solar cells reveal that porous a-Si:H can also achieve excellent SHJ solar cell with an efficiency of 22.8%.