Control of ghost plating by antireflection coating layer stacking on crystalline silicon solar cells

During the plating process, ghost plating could appear when the quality of the passivation layer is poor, and it causes an increase in the recombination rate. In this paper, light-induced plating was applied, and various passivation layers were investigated to remove ghost plating in crystalline silicon solar cells. These included, (1) SiN
_x
, (2) double SiN
_x
layer, (3) double layer with thermal silicon oxide and SiN
_x
and (4) double layer of SiN
_x
and SiO
_x
by PECVD. For the plated solar cells, a laser was used to remove various ARC layers and phosphoric acid was spin-coated onto the doped silicon wafer prior to laser ablation. As a result, a thermal SiO
₂
/PECVD SiN
_x
layer showed the lowest pinhole density and its wet vapor transmission rate was characterized. The solar cell with the thermal SiO2/PECVD SiNx layer showed the lowest J
₀₂
value, as well as improved V
_oc
and J
_sc
.