Determination of AZO hall parameters on flexible CIGS solar cells

Development of transparent conducting oxides on a flexible non-transparent substrate is described. We compared Hall effect results on unit films with results from a new Hall measurement procedure for characterization of TCO material on full stack devices. Hall mobility of films 300-400 nm thick was 15 cm
²
/Vs on full stack material compared with 5 cm
²
/Vs on glass. On both substrates mobility increased with thickness. Results are explained by grain size differences suggesting that smaller grained films on glass limit mobility. Process development on full stack material is preferred as it better represents the actual implemented film.