Interfacial modifiers for enhanced stability and reduced degradation of Cu(In, Ga)Se2 devices

Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In, Ga)Se
₂
device without significantly degrading the device performance, a promising step towards improving the lifetime performance.