Interface Influence on the Long-Wave Auger Suppressed Multilayer N+ $\pi$ P+p+n+ HgCdTe HOT Detector Performance

This paper reports on N
⁺
-π interface influence on the performance: dark current and response time of multilayer long-wave infrared mercury cadmium telluride (MCT - HgCdTe) N
⁺
πP
⁺
p
⁺
n
⁺
detector under high operating temperature conditions, T = 230 K. A detailed analysis of the dark current and response time as a function of device architecture, i.e., N
⁺
-π interface and applied bias was performed to optimize the working conditions. Dark current of the long-wave HgCdTe detector with 50% cutoff wavelength of λ
_co
≈ 10.6 μm at T = 230 K was reduced from ≈ 62 to 12 A/cm
²
, while response time could be reduced to ≈ 52 ps for low-voltage operation, V = 200 mV.