An Effective Approach of Improving Electrical and Thermo-Mechanical Reliabilities of Through-Silicon Vias

An effective approach is proposed to improve the electrical and thermo-mechanical reliabilities of through-silicon vias (TSVs) with the addition of a grounded highly doped layer (HDL) around TSV. On the electrical aspect, the reduction of the peak noise induced by the proposed TSV configuration reaches more than 83% in time domain and about 15 dB in frequency domain compared with that of the TSV without HDL. On the thermo-mechanical aspect, the keep-out zone induced by the proposed TSV configuration decreases by as much as 3.9 μm (38.2%) compared with coaxial TSV with metal guard ring. Furthermore, the proposed TSV configuration proves to be process realizable.