Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capability

Negative-differential resistance devices, i.e. Resonant Tunneling Diodes (RTD) have recently enabled a substantial improvement in low-power memories and high-speed logic gates. For logic circuits two series connected RTDs are monolithically integrated with parallel HFET input branches building the monostable-bistable transition logic element (MOBILE). In this paper we report on drastic improvements of the MOBILE concept addressing the major restrictions: trade-off between output driving capability, number of inputs and additional current for the parallel input branches, critical design criteria for two independent technologies: HFET (threshold voltage, lateral current density) and RTD (device area, vertical current density).