Achievement of vertically stacked InAs quantum dots on InP emitting at 1.55 /spl mu/m

Due to the use of (311)/sub B/ InP substrate we grew InAs SAQD with similar qualities to the InAs/GaAs system. In addition a method using a growth interruption under P/sub 2/ over pressure makes the control of the PL peak emission of the quantum dots structure easy to monitor. Thus this peak position is tuned to 1.55 /spl mu/m at room temperature. This method has also been used to grow vertically stacked QDs emitting at 1.55 /spl mu/m with high efficiency.