Ruthenium doped high power 1.48 /spl mu/m SIPBH laser

SIPBH 1.48 /spl mu/m pumping laser diodes with ruthenium doped InP semi-insulating layers are demonstrated for the first time. Structures with an InP:Ru layer, an InP:Ru and additional n-InP hole block, and a reference structure with InP:Fe and n-InP are compared. The use of an n-InP hole blocking layer is necessary to obtain high output power. Light output power of 190 mW is obtained for a SIPBH with InP:Ru in comparison to 207 mW for the InP:Fe reference structure at 700 mA. With an improved active layer design 275 mW of output power was demonstrated at 1000 mA.