MOVPE overgrowth of (InGa)P gratings for GaAs-based DBR laser

Distributed Bragg reflector lasers with an (InGa)P waveguide layer are realized by two-step metalorganic vapor phase epitaxy. A first-order grating in (InGa)P with a period of 168 nm overgrown with (AlGa)As is used for the operating wavelength of 1060 nm. The regrowth step is optimized by varying the heat-up procedure, the growth temperature and the start of growth using arsine and tertiary butyl arsine as group V precursors. With both precursors we achieve excellent DBR lasers with threshold current densities of 116 A/cm/sup 2/ and output powers of 60 mW.