A V-Band Current-Reused LNA With a Double-Transformer-Coupling Technique

This letter presents a current-reused V-band low-noise amplifier (LNA) with a double-transformer-coupling technique in 65nm CMOS technology. A couple of common-source (CS) stages are stacked to share current, and the double transformers are used as an RF signal path between the CS stages for both gain and stability considerations. The LNA has three CS-CS stages, and achieves a peak gain of 31.4 dB, a minimum noise figure (NF) of 4.7 dB, and a P1dB of -2 dBm over 62.9-67 GHz with a power consumption of 6 mW. The chip size is 0.66 × 0.90 mm
²
including pads.