High-Performance Solution-Processed Zinc–Tin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays

The use of the charge-screening method to obtain high-performance solution-processed zinc-tin-oxide (ZTO) thin-film transistors (TFTs) for transparent flexible displays is investigated. The proposed ZTO TFTs employing solution-processed ferroelectric, poly (vinylidenefluoride-co- trifluoroethylene) (PVDF-TrFE) copolymer exhibit excellent switching characteristics, including a shift in the threshold voltage toward 0 V and a decrease in the OFF-state current and the sub-threshold swing. The long-term stability of ZTO/PVDF-TrFE TFTs against electrical bias combined with visible-light illumination at 60 °C is also demonstrated. The proposed method is based on an all-solution-process that was carried out below 100°C except the metal deposition, and this allows the ZTO TFT matrix to be integrated into transparent display backplanes on flexible substrates.