Effects of the polysilicon etching on the gate oxide damages in an electron cyclotron resonance (ecr) halide-containing plasma

Effects of the etching of the polysilicon gates on the damages of the thin gate oxides in the electron cyclotron resonance(ECR) plasma have been investigated. The mechnisms for these damages have been estabished. The chlorine containing plasma will directly impinge the oxide and induce a high leakage current. On the other hand, the fluorine-containing plasma can not directly attack the oxide and does not enhance the leakage current.