The impact of ion-implantation damage on dopant diffusion

The dopant diffusion has been investigated for silicon substrates implanted with high dosages above the amorphization threshold. Both the transient enhanced diffusion and the uphill diffusion are shown in boron, phosphorus, and arsenic profiles with Si ion implants. The uphill diffusion toward residual damages has been simulated with a phenomenological segregation model. The boron enhanced diffusion with As and P implantation is also affected by the n-type doping besides implant damages.