Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model

In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods for SiC MOSFETs.