Determination of parameters in semiconductors using the Shubnikov-de Haas effect

The oscillations of reflection and transmission coefficients of the probing laser radiation (Shubnikov-de Haas (SdH) effect) in low-dimensional GaAs/AlGaAs structures, containing quantum wells, and in degenerate n-InSb at low temperatures (/spl sim/2 K) were investigated. The possibility of contactless determination of the transport parameters in semiconductors, based on the observations of SdH oscillations at liquid nitrogen temperature, is discussed.