Bulk GaAs photonic devices with two opposite gridded electrodes

In applications requiring more than one switch, such as the Marx Generator or the Frozen Microwave Generator, three critical properties are large voltage hold-off, good effective quantum efficiency, and fast risetime. In this regard a promising switch design is one in which the electrodes on opposite sides of the switch are gridded and the light is introduced parallel to the applied electric field through the open holes in the electrode. Gridded devices, with a 5mm gap thickness,have demonstrated over 35 kV voltage capability as well as high efficiency, requiring less than 0.5 mJ to turn on. Incorporating these optically activated switches (OAS) into a Frozen Microwave Generator [1] has resulted in peak to peak megawatt output power levels, obtained at UHF.