A new trench bipolar junction diode (TBJD)

In this paper, a new power diode structure called the trench bipolar junction diode (TBJD) is proposed. For the first time, the feasibility of controlling the anode injection efficiency of a diode by the action of an integrated reverse active transistor is demonstrated. The base of the reverse active transistor is shielded by a deep p/sup +/ trench region in the TBJD to achieve superior dynamic characteristics compared to the conventional p-i-n diode structure. Both simulation and experimental results are provided to illustrate this novel structure.