A planarized high-voltage silicon trench sidewall oxide-merged PIN/Schottky (TSOX-MPS) rectifier

A new trench junction rectifier, which uses sidewall oxide spacers to separate the main PIN region from the adjacent Schottky regions, is described. The Schottky regions help remove minority carriers from the drift region during turn off and facilitate forward conduction in the on-state. Simulations and experimental measurements have shown that the peak reverse current and reverse recovery charge are significantly improved along with a lower forward voltage drop when compared to the conventional P/sup +/IN rectifier.