A unified compact scalable /spl Delta/I/sub d/ model for hot carrier reliability simulation

A new compact drain current difference (/spl Delta/I/sub d/) model for hot carrier induced circuit reliability simulation is presented in this paper. For the first time, a single equation unifies the subthreshold, linear and saturation regions with high accuracy in both forward and reverse operation modes. It applies to both interface state generation and electron trapping dominant device degradation mechanisms. The model also shows good scalability.