Hydrogenation of polysilicon thin-film transistor in a planar inductive H/sub 2//Ar discharge

A planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFTs). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time, in addition, to promote the ionization of hydrogen, Ar gas is also introduced to H/sub 2/ plasma during hydrogenation. Furthermore, we discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H/sub 2//Ar mixed plasma. Moreover, the post-hydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFTs.