Nitride-Clad LOCOS Isolation For 0.25/spl mu/m CMOS

In this paper, a new defect-free isolation process called Nitride-Clad LOCOS (NCL) has been developed for a 0.25μm CMOS technology which exhibits 600Å(per side) birds beak encroachment profiles with adequate field oxide thickness in narrow field regions, Excellent electrical results for 0.25μm CMOS devices, low-leakage diodes, and 55A gate oxide integrity are presented.