Design Methodology Of Deep Submicron CMOS Devices For 1V Operation

In this paper, design method for high performance deep-submicron CMOS operated at around 1V has been proposed, together with discussion on threshold voltage limitation and suppression of parasitic effects. Based on above consideration, a 1V operated 0.15μm CMOS was fabricated and evaluated. As a result, 50psec at 1V operation for the CMOS ring oscillator at room temperature has been verified.