A New Capacitance Measurement Method For Lateral Diffusion Profiles In MOSFET's With Extremely Short Overlap Regions

Lateral diffusion profiles in overlap regions between gate electrodes and source/drain become increasingly important in device reliability and circuit speed with decreasing device dimensions. Also, short channel effects strongly de end on the overlap length. The measurement method of gate-to-drain capacitance (Cgd) has been widely used in order to determine the lateral profiles[1- 3].