A High-performance Ultra-thin Quarter-Micron CMOS/SIMOX Technology

We desc r ibe a high-performance 0.25-/spl mu/m-gate CMOS/SIMON technology, and high-speed CMOS circuit operation at a low power supply voltage of 1-2 V. Fully-depleted N/sup +/ poly-Si gate nMOSFETs and P/sup +/ poly-St gate pKOSFETs with 7-nm-thick gate oxide were fabricat- ed using planarized sub-quarter-micron Isolation and a two-level metallization technique. The propagation delay time of a CMOS ring oscillator is 30 ps/stage at the supply voltage of 2 V and 45 ps/stage at 1 V.