TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections

A new approach for including quasi-ballistic effects into TCAD drift diffusion simulations of short-channel III–V MOSFETs at low longitudinal fields is presented. The model is based on the concept of ballistic mobility through a modified Matthiessen rule. It has been applied to double-gate thin-body InGaAs MOSFETs and benchmarked against multi-subband Monte Carlo simulations. Our results indicate that the model provides I–V characteristics in good agreement with Monte Carlo for channel lengths as short as 15 nm.