Toward effective passivation of graphene to humidity sensing effects

Graphene has a number of remarkable properties which make it well suited for both transistor devices as well as for sensor devices such as humidity sensors. Previously, the humidity sensing properties of monolayer graphene on SiO
₂
substrates were examined - showing rapid response and recovery over a large humidity range. Further, the devices were fabricated in a CMOS compatible process which can be incorporated back end of the line (BEOL). We now present a way to selectively passivate graphene to suppress this humidity sensing effect. In this work, we experimentally and theoretically demonstrate effective passivation of graphene to humidity sensing - allowing for future integration with other passivated graphene devices on the same chip.