Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge
₃₀
Se
₇₀
devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO
₂
devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge
₃₀
Se
₇₀
memory devices degrade after gamma-ray exposure while they are well preserved in SiO
₂
selector devices.