Study on a novel junction edge termination for HK-MOSFET

A novel structure of junction edge termination (JET) for HK-MOSFET is studied. It consists of a deep trench filled with P-type silicon and a field plate on the surface. The P region is used to sustain most of the voltage in the JET region, while the field plate is used to reduce the electric field on the surface near the source contact. Numerical simulation shows that, for an HK-MOSFET with the proposed JET, the breakdown voltage (V
_B
= 770 V) is as the same as that of an HK-MOSFET cell(V
_B
= 779 V). The width of the proposed JET is reduced by 30% compared with that of the deep trench termination filled with HK dielectric material.