Ka-band GaAs MMIC LNA using a 0.15um metamorphic InGaAs

A complete design of three-stage class A low-noise amplifier (LNA) operating in frequency range of 36 - 40 GHz using 0.15 μm metamorphic InGaAs HEMT technology is presented in this paper. The circuit is driven by a 1 V supply and the OIP3 dB achieved was 22 dBm with an input and output return loss of greater than 8 dB, gain of above 26 dB and noise figure below than 2.36 dB in the whole frequency range. The final layout occupies an area of 4.4 × 2 mm
²
.