High SNR CMOS S/H IC for multi-carrier direct RF under sampling receiver

Direct RF under sampling reception has been developed to reduce the size and the power consumption of the terrestrial wireless terminals. The system is suitable for multi-carrier operation. Some sample and hold (S/H) IC was reported to operate in high frequency or wideband operation. However the signal-noise ratio (SNR) has limitation caused by output buffer. We proposed high SNR S/H circuit with small gain ripple at the MHz to GHz frequency band for multi-carrier reception. The proposed S/H IC is designed and fabricated in 90 nm CMOS process. The fabricated IC performs improving of the output power and SNR about 23Bm and 10dB, respectively. Moreover, the maximum frequency with |S11| of less than −10dB is 11.5GHz.