Evaulation the degradation in nMOSFETs with HfO2 gate dielectric and interfacial layer by 3D Kinetic Monte-Carlo method

This paper evaluates the degradation process in nMOSFETs with HfO
₂
gate dielectric and interfacial layer (IL) by 3D Kinetic Monte-Carlo (KMC) method considering multi-trap coupling. The degradation and corresponding trap evolution in a 1-nm EOT dielectric stack with different thicknesses of SiO
₂
IL is simulated under different gate biases (V
_g
) and temperature (T). The results indicate that IL can suppress the positive bias temperature instability (PBTI) but increase the gate leakage and weaken the capability to endure stress.