Capacitance matching effects in negative capacitnace field effect transistor

Negative capacitance effects are experimentally observed in p-type bulk MOSFET with PZT ferroelectric capacitor. The average subthreshold slope of 45 mV/decade at 300 K is experimentally demonstrated with 10
⁵
on-/off-current ratio and minimal hysteresis window of 0.2 V, albeit at relatively high drain voltage. Furthermore, a change in the nature of hysteresis was observed with drain voltage, which provides insight into the issues of capacitance matching between the MOSFET and the ferroelectric capacitor.