Optimization of PESD implant design for ESD robustness of 5V drain-back N-LDMOSFET

An N-LDMOS ESD protection device with drain back and PESD optimization design is proposed. With PESD layer enclosing the N+ drain region, a parasitic SCR is created to achieve high ESD level. When PESD is close to gate, the turn-on efficiency can be further improved (Vt1: 11.2 V reduced to 7.2 V) by the punch-through path from N
⁺
/PESD to PW. The proposed ESD N-LDMOS can sustain over 8KV HBM with low trigger behavior without extra area cost.