Surface plasmon polariton dispersion in inhomogeneous semiconductors

We consider the surface plasma polariton dispersion in inhomogeneous semiconductor/ air interface. The plasma permittivity in a two-layer compound is studied by inclusion of an inhomogeneous plasma density. Numerical solutions were obtained for the plasma dispersion curve of an inhomogeneous semiconductor/dielectric structure. A detailed analysis was carried out to derive an expression for the dispersion of a silicon/air interface, or other [1], by applying our new original approach [2]. This approach takes into account the free-charge carrier concentration profile effect.