Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

In this letter, we propose a new method to improve resistive switching properties in ZrO
₂
-based conductive-bridge resistive memory devices by introducing a thin AlN layer with high thermal conductivity between the ZrO
₂
layer and TiN bottom electrode. Compared with the Cu/TiW/ZrO
₂
/TiN single-layer device, the Cu/TiW/ZrO
₂
/AlN/TiN bilayer device exhibits lower operation voltages, higher endurance performance, and higher resistive switching uniformity. These substantial improvements in the resistive switching properties are attributed to the formation and rupture of conductive filament that can be effectively controlled in the device after inserting the AlN layer.