A Disturbance-Free Energy-Efficient STT-MRAM Based on Complementary Polarizers

Complementary-polarizer magnetic tunnel junction (CPMTJ) is a promising device for high-performance nonvolatile memory because of its low critical current and inherently differential structure. In this letter, we present a novel CPMTJ-based STT-MRAM structure with separated reading and writing paths and explore the capability of the proposed structure to achieve disturbance-free READ operations based on the Object Oriented Micromagnetic Framework (OOMMF). Micromagnetic simulations show that the proposed structure can reduce the read disturbance rate significantly and achieve disturbance-free READ operations with a suitable exchange stiffness constant. In addition, a compact model for CPMTJ is developed to evaluate the proposed structure at the circuit level. SPICE simulations based on the proposed model show that the proposed structure achieves eight times improvement in access energy efficiency over the previous CPMTJ-based STT-MRAM while preserving high access speed.