Generation of THz radiation in epitaxial InGaAs films on InP substates of various crystallographic orientations

We study the THz wave generation by the time-domain spectroscopy method in low-temperature grown InGaAs layers on InP substrates with crystallographic orientations (100) and (411) It was found that the THz wave generation is 3-5 times more effective in the case of (411)A InP substrates as compared to the (100) substrates. In samples grown at high pressure of As4 generation of THz waves is more effective at low-frequency range less than 200 GHz.