Self consistent carrier transport in band engineered HgCdTe nBn detector

In this paper we study the influence of carrier transport under non-equilibrium condition in HgCdTe superlattice barrier detector employing self-consistent NEGF-Poisson solver. We use single-band effective mass approximation extracted from k.p envelope function to calculate dark current in the presence of applied bias. We expect the properties of superlattice barrier (doping, layer width, etc.) modify the band alignment between barrier layer and absorber layer, and consequently the dark current of band engineered HgCdTe detector will vary.