Design consideration for ion-implanted planar GaAs blocked-impurity-band detectors

Design of ion implantation scheme for the planar GaAs blocked-impurity-band (BIB) detectors is performed by numerical simulation. The device structure and the preparation process are presented. It is demonstrated that the implanted Si ion concentration of the absorbing region and the contact region are 5×10
¹⁵
cm
⁻³
and 4×10
¹⁹
cm
⁻³
, respectively, and can be implemented by four-step implantation with different ion energies and doses.