A 40 Gbaud SiGe:C BiCMOS driver for InP segmented MZMs with integrated DAC functionality for PAM-16 generation

This paper outlines the design and electrical characterization of an optical modulator driver fabricated in a 0.13 [m BiCMOS SiGe:C technology. The prototype, optimized for hybrid assembly with a 15-segment InP segmented Mach-Zehnder modulator (SE-MZM), displays integrated 4-bit digital-to-analog converter (DAC) functionality, allowing the generation of PAM-16 modulation format. The driver delivers a differential output swing of 2.5 Vpp across all 15 segments, dissipating less than 1 W of power. Electrical eye diagrams up to 40 Gb/s are reported, demonstrating the capability for high speed 4 × 40 Gb/s electro-optical transmission. The devised hybrid solution proves the potential of SiGe HBT drivers for achieving higher speeds over their CMOS counterparts, with comparable power dissipation.