100-mV 44-µW 2.4-GHz LNA in 16 nm FinFET technology

To achieve both ultra-low-voltage (ULV) and ultra-low-power (ULP), we adopted the sub-threshold design on gate and near-triode design on drain terminals. The proposed low-noise amplifier (LNA) achieves a power gain of 6.9 dB and a noise figure (NF) of 3.0 dB at 2.4 GHz. The PDC is 44 µW under a VDD of 100 mV. The input and output matching are −10.4 dB and −5.7 dB, respectively. The LNA is fabricated in TSMC FinFET Plus CMOS technology.