AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with TiO2 gate dielectrics

Summary form only given. AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs), using TiO
₂
as gate dielectric, are proposed. The dielectric constant of the TiO
₂
gate-dielectric layer extracted from C-V measurement is about 20.57. This AlGaN/GaN MOS-HEMT design exhibits enhanced device performances. As compared to a conventional HEMT, superior improvements are achieved in the MOS-HEMT herein. The experimental results demonstrate the exceptional potential of the TiO
₂
/AlGaN/GaN MOS-HEMT in microwave circuit and high-temperature applications.