The electrical properties of HgCdTe layers grown by MBE on Si and P + / n junction formed on its basis

We studied the electrical properties of undoped and indium-doped and arsenic-doped Cd
_X
Hg
_1-X
Te layers with x ≈ 0.3 - 0.4 grown by molecular beam epitaxy on Si (310) substrates. After the growth HgCdTe layers were annealed at mercury atmosphere. The lifetime at room temperature in the As-doped layers, do not depend on its carrier concentration. The lifetime in indium-doped layers increased after annealing at saturated mercury vapor pressure. It is explained by suppression of recombination centers density. Temperature dependence of the reverse currents of p
^+-
n junctions fabricated in Cd
_0.3
Hg
_0.7
Te heterostuctures grown by MBE on Si substrates has been studied.