Comparative study on noise characteristics of As and Sb-based HEMTs

Summary form only given. We comparatively study the RF characteristics including f
_T
and the noise for InGaAs and InSb HEMTs by using the quantum-corrected Monte Carlo simulation. In the InSb HEMT, the electrons are rather easily heated owing to the smaller m*. Then, it tends to exhibit the larger velocity variance for a single electron σ
_v
²
and thus the larger current variance <;ΔI
_ds
²
>. On the other hand, the InSb HEMT exhibits the higher g
_m
and thus the higher f
_T
even at low V
_ds
. Then, it overcomes the inevitable nature of being easily heated by the ability of the low V
_ds
operation and also the higher f
_T
. Eventually, the InSb HEMT exhibits the lower NF
_min
.