Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

Accurate determination of the flat band voltage (
$V_{\mathrm {{FB}}}$
) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal–oxide–semiconductor (MOS) devices. A modified method to accurately determine
$V_{\mathrm {{FB}}}$
of the In
_0.53
Ga
_0.47
As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted
$V_{\mathrm {{FB}}}$
values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.