Analytical study of BTE based multilayer GFET model

In this paper we have studied a analytical double gate graphene field effect transistor. The developed GFET model is a quasi analytical approach based on Boltzmann transport equation and the explicit expression of drain to source current has been derived. The model has been applied for monolayer to multilayer with single gate or dual gate configuration. The quantum capacitance effect for every layer and the interlayer capacitance have been included to determine the accurate effective top and back gate capacitance. The modeled channel resistance, output and transfer characteristics show good agreement with experimental data for different layers configuration.